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| APT50GF60B2RD APT50GF60LRD 600V APT50GF60B2RD 80A TO-264 (LRD) Fast IGBT & FRED The Fast IGBTTM is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBTTM combined with an APT freewheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. G T-MaxTM (B2RD) * Low Forward Voltage Drop * High Freq. Switching to 20KHz * Low Tail Current * Ultra Low Leakage Current * RBSOA and SCSOA Rated * Ultrafast Soft Recovery Antiparallel Diode MAXIMUM RATINGS (IGBT) Symbol VCES VCGR VGE I C1 I C2 I CM1 I CM2 PD TJ,TSTG TL Parameter Collector-Emitter Voltage C G E C C E APT50GF60LRD G E APT50GF60B2RD/LRD UNIT All Ratings: TC = 25C unless otherwise specified. 600 RY A IN MIN Collector-Gate Voltage (RGE = 20K) Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 90C Pulsed Collector Current Pulsed Collector Current Total Power Dissipation 1 1 600 20 80 50 160 100 300 -55 to 150 300 Watts C Amps Volts @ TC = 25C @ TC = 90C Operating and Storage Junction Temperature Range STATIC ELECTRICAL CHARACTERISTICS (IGBT) Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.50mA) Gate Threshold Voltage (VCE = VGE, I C = 700A, Tj = 25C) TYP MAX UNIT PR EL I Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. M 600 4.5 5.5 2.1 2.2 6.5 2.7 2.8 0.50 mA nA 052-6253 Rev A Volts Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 125C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V, VCE = 0V) 2 2 I CES I GES TBD 100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street APT Website - http://www.advancedpower.com Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord DYNAMIC CHARACTERISTICS (IGBT) Symbol Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets gfe Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT50GF60B2RD/LRD Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCC = 0.5VCES Resistive Switching (25C) VGE = 15V I C = I C2 VCC = .8VCES I C = I C2 MIN TYP MAX UNIT 2600 475 165 170 25 100 20 100 160 200 30 90 290 170 2.2 2.4 4.6 3600 710 250 225 45 140 nC pF Gate-Emitter Charge Gate-Collector ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time RY 6 MIN ns IN RG = 10 A 50 135 435 340 ns IM EL 4 Inductive Switching (150C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10 TJ = +150C Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time 4 mJ PR Inductive Switching (25C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10 30 90 260 100 4.3 mJ S ns Turn-off Delay Time Fall Time Total Switching Losses 4 TJ = +25C VCE = 20V, I C = I C2 Forward Transconductance THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED) Symbol RJC RJA WT Characteristic Junction to Case (IGBT) Junction to Case (FRED) Junction to Ambient TYP MAX UNIT 0.42 0.66 40 0.22 oz gm C/W Package Weight 6.1 10 lb*in N*m Torque 1 Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw 1.1 052-6253 Rev A Repetitive Rating: Pulse width limited by maximum junction temperature. Leakages include the FRED and IGBT. See MIL-STD-750 Method 3471 Switching losses include the FRED and IGBT. APT Reserves the right to change, without notice, the specifications and information contained herein. 2 3 4 APT50GF60B2RD/LRD PRELIMINARY Power dissipation Ptot = (TC) parameter: Tj 150 C 320 Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C 80 W A Ptot 240 IC 60 200 50 160 40 120 30 80 20 40 0 0 10 0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 C 160 TC TC Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 3 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 IGBT A t = 2.9s p K/W IC 10 2 10 s ZthJC 10 -1 100 s 10 1 1 ms D = 0.50 10 ms 0.20 10 -2 0.10 0.05 single pulse 0.02 0.01 10 0 DC 10 -1 0 10 10 1 10 2 V 10 3 10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord F-33700 Merignac - France Bend, Oregon 97702 -1035 Phone: (33) 5 57 92 15 15 Phone: (541) 382-8028 FAX: (33) 5 56 47 97 61 FAX: (541) 388-0364 USA 405 S.W. Columbia Street 052-6253 Rev A VCE tp APT50GF60B2RD/LRD PRELIMINARY Typ. output characteristics Typ. output characteristics IC = f (VCE) parameter: tp = 80 s, Tj = 25 C 100 A IC = f (VCE) parameter: tp = 80 s, Tj = 125 C 100 A 17V 15V 13V 11V 9V 7V IC 80 70 60 50 40 30 20 10 0 0 IC 80 70 60 50 40 30 20 10 0 0 17V 15V 13V 11V 9V 7V 1 2 3 V 5 1 2 3 V 5 VCE VCE Short circuit safe operating area Reverse biased safe operating area ICsc = f (VCE) , Tj = 150C parameter: VGE = 15 V, tsc 10 s, L < 50 nH 10 ICpuls = f (VCE) , Tj = 150C parameter: VGE = 15 V 2.5 IICsc/I C(90C) Csc /IC2 IICpuls/IC Cpulse C1 6 1.5 4 1.0 2 0.5 0 0 100 200 300 400 500 600 V 800 VCE 0.0 0 100 200 300 400 500 600 V 800 VCE 052-6253 Rev A EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord F-33700 Merignac - France Bend, Oregon 97702 -1035 Phone: (33) 5 57 92 15 15 Phone: (541) 382-8028 FAX: (33) 5 56 47 97 61 FAX: (541) 388-0364 USA 405 S.W. Columbia Street APT50GF60B2RD/LRD ULTRAFAST SOFT RECOVERY PARALLEL DIODE MAXIMUM RATINGS (FRED) Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward Current (TC = 85C, Duty Cycle = 0.5) All Ratings: TC = 25C unless otherwise specified. APT50GF60B2RD/LRD UNIT 600 Volts 60 100 600 Amps Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) STATIC ELECTRICAL CHARACTERISTICS (FRED) Symbol Characteristic / Test Conditions IN A RY MIN MIN TJ = 25C TJ = 100C TJ = 25C TJ = 100C TJ = 25C TJ = 100C TJ = 25C TJ = 100C TJ = 25C TJ = 100C TJ = 25C TJ = 100C RMS Forward Current TYP MAX UNIT IM IF = 60A 1.8 1.75 1.5 Volts VF Maximum Forward Voltage IF = 120A EL DYNAMIC CHARACTERISTICS (FRED) Symbol trr1 trr2 trr3 tfr1 tfr2 IRRM1 IRRM2 Qrr1 Qrr2 Vfr1 Vfr2 diM/dt IF = 60A, diF /dt = -480A/s, VR = 350V Characteristic IF = 60A, TJ = 150C PR TYP MAX UNIT Reverse Recovery Time, IF = 1.0A, diF /dt = -15A/s, VR = 30V, TJ = 25C Reverse Recovery Time IF = 60A, diF /dt = -480A/s, VR = 350V Forward Recovery Time IF = 60A, diF /dt = 480A/s, VR = 350V Reverse Recovery Current IF = 60A, diF /dt = -480A/s, VR = 350V Recovery Charge IF = 60A, diF /dt = -480A/s, VR = 350V Forward Recovery Voltage IF = 60A, diF /dt = 480A/s, VR = 350V Rate of Fall of Recovery Current 55 70 90 160 160 10 20 350 70 ns 17 Amps 30 nC 900 6 Volts 6 A/s 052-6253 Rev A 800 500 APT50GF60B2RD/LRD 200 Qrr, REVERSE RECOVERY CHARGE (nano-COULOMBS) 2500 TJ = 100C VR = 350V IF, FORWARD CURRENT (AMPERES) 160 TJ = 150C TJ = 100C 80 TJ = 25C TJ = -55C 40 2000 120A 1500 60A 120 1000 500 30A 0 0.5 1.0 1.5 2.0 2.5 VF, ANODE-TO-CATHODE VOLTAGE (VOLTS) Figure 1, Forward Voltage Drop vs Forward Current 50 IRRM, REVERSE RECOVERY CURRENT (AMPERES) TJ = 100C VR = 350V 0 0 10 50 100 500 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 2, Reverse Recovery Charge vs Current Slew Rate 2.0 Kf, DYNAMIC PARAMETERS (NORMALIZED) 40 120A 1.6 RY trr IRRM Qrr -50 TJ = 100C VR = 350V IF = 60A 60A 30 30A 20 Qrr trr 1.2 10 IM 0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 3, Reverse Recovery Current vs Current Slew Rate 200 TJ = 100C VR = 350V IN 0.4 0.0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 4, Dynamic Parameters vs Junction Temperature 1200 15.0 Vfr, FORWARD RECOVERY VOLTAGE (VOLTS) EL tfr, FORWARD RECOVERY TIME (nano-SECONDS) A 0.8 trr, REVERSE RECOVERY TIME (nano-SECONDS) 160 120A 60A 30A 1000 800 600 400 200 12.5 10.0 7.5 5.0 2.5 120 80 40 PR Vfr Tfr 0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 5, Reverse Recovery Time vs Current Slew Rate 0.7 0.5 ZJC, THERMAL IMPEDANCE (C/W) 0 0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 6, Forward Recovery Voltage/Time vs Current Slew Rate D=0.5 0.2 0.1 0.05 0.1 0.05 0.02 Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 0.01 0.005 0.01 SINGLE PULSE 052-6253 Rev A 10-3 10-2 10-1 VR, REVERSE VOLTAGE (VOLTS) RECTANGULAR PULSE DURATION (SECONDS) Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 0.001 10-5 10-4 1.0 10 APT50GF60B2RD/LRD Vr D.U.T. 30H trr/Qrr Waveform 0v -15v 1 2 3 4 IF - Forward Conduction Current PR EL IM IN A RY diF /dt Adjust Figure 25, Diode Reverse Recovery Test Circuit and Waveforms +15v PEARSON 411 CURRENT TRANSFORMER diF /dt - Current Slew Rate, Rate of Forward Current Change Through Zero Crossing. IRRM - Peak Reverse Recovery Current. 1 4 6 Zero 5 trr - Reverse Recovery Time Measured from Point of IF 3 Current Falling Through Zero to a Tangent Line { 6 diM/dt} Extrapolated Through Zero Defined by 0.75 and 0.50 IRRM. 0.5 IRRM 0.75 IRRM 2 5 6 Qrr - Area Under the Curve Defined by IRRM and trr. diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr. Figure 8, Diode Reverse Recovery Waveform and Definitions Qrr = 1/2 (trr . IRRM) T-MAXTM Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) TO-264 Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Collector (Cathode) Collector (Cathode) 20.80 (.819) 21.46 (.845) 25.48 (1.003) 26.49 (1.043) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) Gate Collector (Cathode) Emitter (Anode) Gate Collector (Cathode) Emitter (Anode) 052-6253 Rev A 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. 0.48 (.019) 0.76 (.030) 0.84 (.033) 1.30 (.051) 2.79 (.110) 2.59 (.102) 3.18 (.125) 3.00 (.118) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Dimensions in Millimeters and (Inches) |
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